FL9906 :  Large Area Magnetic Plasma Sources

FL9907:   Wafer-Chuck Interactions

FL9910:   HDP CVD Applications

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CHAMBER DESIGN

Plasma Uniformity and Ion Flux Uniformity Optimization

Optimization of Injector Locations, Size, Angle, Orifice Diameter

Electrostatic Chuck Design and Analysis, RF Wafer Biasing

Scale-up from 200mm to 300mm

Optimization of Plasma Source, Coil Shape, Location, Electrostatic (Faradey) Shield

Optimization of Chamber Height (distance between electrodes)

Thermal and Stress Analysis in the Ceramic Liner

Optimization and Analysis of Dome Heating/Cooling

Optimization of Transport During Chamber Clean for Maximum Clean/Etch Uniformity

Analysis of Magnetic Plasma Confinements


PLASMA ENHANCED CVD

Analysis of Neutral Species Transport in the Chamber during the Deposition (5-10 mtorr) and Clean (up to 1torr) Process Regimes

Analysis of Plasma Density Distribution, Power Deposition Uniformity, Ion Flux Distribution as a function of process parameters (gas flows, chemical composition, RF power, etc.) and chamber, plasma source and ESC chuck geometry

Analysis and Optimization of Sputter Etch Nonuniformity

Analysis of Wafer Clamping for maximum Temperature Uniformity

Analysis of the Deposition rate Uniformity as a function of geometry and process parameters

Analysis of the Magnetic Confinement/Enhancement

Link with the Gap Fill Simulators (project with Stanford)


ETCH Applications

Analysis and Optimization of the ESC Chuck

Analysis and Optimization of the Focus Ring

Analysis and Optimization of the Transport of the Etching Species in the Chamber for max. Etch Uniformity

Analysis and Optimization of the Ion Fluxes on the Wafer Surface

Analysis of the local/pattern dependent Microloading Effects

Analysis of Etch rate Uniformity as a Function of Geometry and Process Parameters

Charge Damage Analysis

Link with the Etch Profile Simulators