FL9906 : Large Area Magnetic Plasma Sources
FL9907: Wafer-Chuck Interactions
FL9910: HDP CVD Applications
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CHAMBER DESIGN
Plasma Uniformity and Ion Flux Uniformity Optimization
Optimization of Injector Locations, Size, Angle, Orifice Diameter
Electrostatic Chuck Design and Analysis, RF Wafer Biasing
Scale-up from 200mm to 300mm
Optimization of Plasma Source, Coil Shape, Location, Electrostatic (Faradey) Shield
Optimization of Chamber Height (distance between electrodes)
Thermal and Stress Analysis in the Ceramic Liner
Optimization and Analysis of Dome Heating/Cooling
Optimization of Transport During Chamber Clean for Maximum Clean/Etch Uniformity
Analysis of Magnetic Plasma Confinements
PLASMA ENHANCED CVD
Analysis of Neutral Species Transport in the Chamber during the Deposition (5-10 mtorr) and Clean (up to 1torr) Process Regimes
Analysis of Plasma Density Distribution, Power Deposition Uniformity, Ion Flux Distribution as a function of process parameters (gas flows, chemical composition, RF power, etc.) and chamber, plasma source and ESC chuck geometry
Analysis and Optimization of Sputter Etch Nonuniformity
Analysis of Wafer Clamping for maximum Temperature Uniformity
Analysis of the Deposition rate Uniformity as a function of geometry and process parameters
Analysis of the Magnetic Confinement/Enhancement
Link with the Gap Fill Simulators (project with Stanford)
ETCH Applications
Analysis and Optimization of the ESC Chuck
Analysis and Optimization of the Focus Ring
Analysis and Optimization of the Transport of the Etching Species in the Chamber for max. Etch Uniformity
Analysis and Optimization of the Ion Fluxes on the Wafer Surface
Analysis of the local/pattern dependent Microloading Effects
Analysis of Etch rate Uniformity as a Function of Geometry and Process Parameters
Charge Damage Analysis
Link with the Etch Profile Simulators